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| ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT646 Repetitive voltage up to Mean on-state current Surge current 2200 V 1730 A 36 kA TARGET SPECIFICATION feb 97 - ISSUE : 03 Symbol Characteristic Conditions Tj [C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM 2200 2300 2200 70 70 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on-state current I t On-state voltage Threshold voltage On-state slope resistance 180 sin, 50 Hz, Th=55C, double side cooled 180 sin, 50 Hz, Tc=85C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 2900 A 125 125 125 125 1730 1495 36 6480 x1E3 1.6 0.90 0.240 A A kA As V V mohm I t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 2200 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 25V, 10 ohm , tr=.5 s dV/dt = 20 V/s linear up to 75% VDRM di/dt=-20 A/s, I= 1430 A VR= 50 V VD=5V, gate open circuit VD=5V, tp=30s 125 125 25 125 25 25 200 500 3 250 A/s V/s s s C A 300 700 mA mA GATE V I V V I V P P GT GT GD FGM FGM RGM GM G Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation VD=5V VD=5V VD=VDRM 25 25 125 3.5 300 0.25 30 10 5 V mA V V A V W W Pulse width 100 s 150 2 MOUNTING R R T F th(j-h) th(c-h) j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT646 S 22 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 21 6 -30 / 125 22.0 / 24.5 520 C/kW C/kW C kN g VDRM&VRRM/100 AT646 PHASE CONTROL THYRISTOR TARGET SPECIFICATION feb 97 - ISSUE : 03 ANSALDO DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 130 120 110 100 90 80 70 60 50 0 500 1000 1500 2000 2500 IF(AV) [A] 30 60 90 120 180 DC PF(AV) [W] 3500 3000 90 120 DC 180 2500 60 2000 30 1500 1000 500 0 0 500 1000 1500 2000 2500 IF(AV) [A] AT646 PHASE CONTROL THYRISTOR TARGET SPECIFICATION feb 97 - ISSUE : 03 ANSALDO DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 130 120 110 100 90 30 80 70 60 50 0 500 1000 1500 2000 2500 IF(AV) [A] 60 90 120 180 PF(AV) [W] 3500 180 3000 120 2500 2000 1500 1000 500 0 0 500 30 60 90 1000 1500 2000 2500 IF(AV) [A] AT646 PHASE CONTROL THYRISTOR TARGET SPECIFICATION feb 97 - ISSUE : 03 ANSALDO ON-STATE CHARACTERISTIC Tj = 125 C 6000 40 35 30 On-state Current [A] 4000 25 3000 ITSM [kA] 20 15 10 1000 5 0 0.6 1.1 1.6 On-state Voltage [V] 2.1 2.6 0 1 SURGE CHARACTERISTIC Tj = 125 C 5000 2000 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 25.0 20.0 Zth j-h [C/kW] 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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